Cite
HARVARD Citation
Aguirre, P. et al. (2019). 2D and 3D TCAD simulation of III-V channel FETs at the end of scaling. Solid-state electronics. pp. 123-128. [Online].
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Aguirre, P. et al. (2019). 2D and 3D TCAD simulation of III-V channel FETs at the end of scaling. Solid-state electronics. pp. 123-128. [Online].