Ultrasensitive Photodetector: Edge‐State‐Enhanced Ultrahigh Photoresponsivity of Graphene Nanosheet‐Embedded Carbon Film/Silicon Heterojunction (Adv. Mater. Interfaces 11/2019). Issue 11 (7th June 2019)

• Record Type: Journal Article
• Authors: Zhang, Xi; Lin, Zezhou; Peng, Da; Ye, Lei; Zang, Jianfeng; Diao, Dongfeng
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 11(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-06-07
• Subjects: edge states -- edge trapping centers -- heterojunction -- standing‐structured graphene nanosheets -- ultrahigh photodetectivity; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201970073
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Graphene edge states have superior properties for photo‐electron trapping. In article number1802062 by Xi Zhang, Dongfeng Diao, and co‐workers, a van de Waals heterojuction is reported with an ultrahigh responsivity of 61.52A W −1 and a high specific detectivity of 3.04 × 10 14 Jones. Edge state modulates the Fermi‐level and reduces the recombination rate of photo‐excited electron‐hole pairs.