SiOC‐Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties. Issue 6 (27th February 2019)

• Record Type: Journal Article
• Authors: Garman, Paul D.; Yang, Hao; Yen, Ying‐Chieh; Yu, Jianfeng; Kwak, Kwang Joo; Malkoc, Veysi; Talesara, Vishank V.; Lee, Ly J.; Lu, Wu
• Is Part Of: Physica status solidi. Volume 13:Issue 6(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-27
• Subjects: electrical conductivity -- graphene -- high mobility -- mechanical strength -- silicon oxycarbide; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201900017
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : A facile method is developed for fast and high‐coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm 2 V −1 s −1 . Abstract : A facile method is developed for fast and high‐coverage graphene growth on silicon wafers with covalent bonding using atmospheric pressure chemical vapor deposition. This method provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm 2 V −1 s −1 .