Cite
HARVARD Citation
Ma, J. et al. (2019). Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices. Advanced Electronic Materials. p. n/a. [Online].
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Ma, J. et al. (2019). Asymmetric Double‐Gate β‐Ga2O3 Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices. Advanced Electronic Materials. p. n/a. [Online].