Memory Devices: An Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire via Local Gating (Adv. Electron. Mater. 6/2019). (6th June 2019)

• Record Type: Journal Article
• Authors: Shi, Qian; Jiang, Fengxian; Yu, Yang; Lin, Hanxuan; Kou, Yunfang; Miao, Tian; Liu, Hao; Yang, Wenting; Wang, Wenbin; Cai, Peng; Xu, Xiaohong; Guo, Hangwen; Yin, Lifeng; Shen, Jian
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 6(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-06-06
• Subjects: Boolean logic operation -- high‐speed switching -- manganite nanowire -- multibit memory -- voltage control; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201970029
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : In article number1900020, a novel approach to the realization of coexisting multi‐bit memory and Boolean logic operations in a single device unit is demonstrated by Q. Shi et al. This is achieved through the use of manganite nanowires, which interact with electric fields in such a way as to allow control of eight‐level resistive states with high accuracy. Their architecture requires a current density of just 4 × 10 1 A cm −2 to operate and exhibits a switching time of less than 8 ns.