High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes. Issue 22 (29th May 2019)

• Record Type: Journal Article
• Authors: Chen, Shanshan; Xu, Chenxiao; Pan, Xinhua; He, Haiping; Huang, Jingyun; Lu, Bin; Ye, Zhizhen
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 22(2019)
• Page Start: 6534
• Page End: 6538
• Publication Date: 2019-05-29
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc01421g
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9 Mg0.1 O MQWs by using GaN/Al2 O3 as substrates. Abstract : 5-Period ZnO/Zn0.9 Mg0.1 O Multiple Quantum Wells (MQWs) were fabricated by plasma-assisted molecular beam epitaxy. The dominant edge threading dislocations in epitaxial films were dramatically reduced by using GaN/Al2 O3 as substrates. As a result, a record high internal quantum efficiency of 61% at 300 K was obtained for the ZnO/Zn0.9 Mg0.1 O MQWs.