Sanitization of Data in Nanoscale Flash Memory by Thermal Erasing and Reuse of Storage (Phys. Status Solidi A 14∕2018). Issue 14 (24th July 2018)

• Record Type: Journal Article
• Authors: Park, Jun‐Young; Moon, Dong‐Il; Kim, Seong‐Yeon; Im, Hwon; Chang, Ki Soo; Jeong, Chanbae; Choi, Yang‐Kyu
• Is Part Of: Physica status solidi. Volume 215:Issue 14(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-24
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201870029
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Flash Memory In article number1800194 by Jun‐Young Park, Yang‐Kyu Choi and co‐workers, a thermal erasing method for destroying the data stored in flash memory is proposed at cell level and at commercial chip level. The principle of the proposed method is based the loss of electrons stored in the charge trap layer in flash memory at high temperature. The proposed method destroys the data permanently without degrading performance or reliability. In addition, the thermal erasing process allows the memory chip to be reused with stealth, regardless of the capacity of the storage. This study can be used to help improve the level of security for data stored in flash memory and solidstate drives (SSD) against unauthorized users and cyber‐crime.