E-beam evaporated Nb2O5 as an effective electron transport layer for large flexible perovskite solar cells. (June 2017)

• Record Type: Journal Article
• Authors: Feng, Jiangshan; Yang, Zhou; Yang, Dong; Ren, Xiaodong; Zhu, Xuejie; Jin, Zhiwen; Zi, Wei; Wei, Qingbo; Liu, Shengzhong (Frank)
• Is Part Of: Nano energy. Volume 36(2017:Jun.)
• Page Start: 1
• Page End: 8
• Publication Date: 2017-06
• Subjects: Perovskite -- Solar cell -- e-beam evaporation -- Flexible; Nanoscience -- Periodicals; Nanotechnology -- Periodicals; Nanostructured materials -- Periodicals; Power resources -- Technological innovations -- Periodicals; Nanoscience; Nanostructured materials; Nanotechnology; Power resources -- Technological innovations; Periodicals; 621.042
• DOI: 10.1016/j.nanoen.2017.04.010
• Languages: English
• ISSNs: 2211-2855

Abstract

Abstract: E-beam evaporated Nb2 O5 film is directly used as an effective electron transport layer (ETL) for perovskite solar cells without needing any posttreatment. The effect of Nb2 O5 thickness on optical and electronic properties of the perovskite layer deposited thereupon are studied in detail. It is found that 60 nm thick Nb2 O5 ETL delivers the best photovoltaic performance with PCE as high as 18.59%. In particular, e-beam evaporated Nb2 O5 is found to be advantageous in large area flexible perovskite solar cells, with larger area cells showing comparable Jsc and Voc values as smaller area devices, and the PCE loss is mainly caused by increased series resistance leading to reduced FF. With proper cell design to limit the resistance and associated FF loss, it is expected that the large area cells should present respectable FF and PCEs as their smaller area devices. Graphical abstract: Highlights: E-beam evaporated Nb2 O5 film can be directly used as ETL for large area rigid and flexible PSCs with decent PCEs. Nb2 O5 shows negligible light absorption in Vis-IR region and suitable for solar cell application. Nb2 O5 film shows efficient carrier extraction from excited perovskite film and less interface recombination.