Solution‐Processed High‐Performance Hybrid Photodetectors Enhanced by Perovskite/MoS2 Bulk Heterojunction. Issue 18 (12th June 2018)

• Record Type: Journal Article
• Authors: Peng, Zi‐Yu; Xu, Jian‐Long; Zhang, Jing‐Yue; Gao, Xu; Wang, Sui‐Dong
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 18(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-06-12
• Subjects: bulk heterojunction -- MoS2 -- perovskite -- photodetection -- solution processing; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201800505
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: A hybrid structure strategy, utilizing a perovskite/MoS2 bulk heterojunction (BHJ) as the photosensitizer and a reduced graphene oxide (rGO) layer as the conducting channel, is developed to realize high‐performance photodetectors. All the active layers are prepared by a simple and low‐cost solution process. The perovskite/MoS2 BHJ can significantly suppress the recombination of photogenerated carriers due to the selective electron trapping in the MoS2 nanoflakes, and thus the photoinduced hole transfer from perovskite to rGO is facilitated to largely increase the photocurrent. The hybrid photodetectors show excellent figures of merit, such as high responsivity of 1.08 × 10 4 A W −1, high detectivity of 4.28 × 10 13 Jones, high external quantum efficiency of 2.0 × 10 6 %, and fast photoresponse time less than 45 ms. The demonstration of flexible photodetectors on a flexible substrate finds potential applications in wearable and portable electronics. This work highlights the significance of a hybrid structure, combining an appropriate BHJ film with a graphene channel, as a general and effective way for achieving low‐cost and high‐performance photodetectors. Abstract : A hybrid structure strategy, using a perovskite/MoS2 bulk heterojunction (BHJ) as the photosensitizer and a reduced graphene oxide (rGO) layer as the conducting channel, is developed to realize high‐performance photodetectors. The BHJ can significantly suppress the photogenerated carrier recombination due to selective electron trapping in MoS2, and thus photoinduced hole transfer from perovskite to rGO is facilitated for performance enhancement.