Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical p–n Heterojunctions. (26th June 2018)

• Record Type: Journal Article
• Authors: Zhao, Siwen; Wu, Junchi; Jin, Ke; Ding, Huaiyi; Li, Taishen; Wu, Changzheng; Pan, Nan; Wang, Xiaoping
• Is Part Of: Advanced functional materials. Volume 28:Number 34(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-06-26
• Subjects: BP‐InSe heterojunctions -- multifunctional optoelectronic devices -- polarization sensitive photocurrents; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201802011
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: The van der Waals heterojunctions of 2D materials offer tremendous opportunities in designing and investigating multifunctional and high‐performance electronic and optoelectronic devices. In this study, a vertical p–n diode is constructed by vertically stacking p‐type few‐layer black phosphorus (BP) on n‐type few‐layer indium selenide (InSe). The photodetector based on the heterojunction displays a broadband and gate‐modulated photoresponse under illumination. More importantly, by taking advantage of the strong linear dichroism of BP, the device demonstrates a highly polarization‐sensitive photocurrent with an anisotropy ratio as high as 0.83. Additionally, the device can function in a zero‐bias photovoltaic mode, enabling a fast photoresponse and low dark current. The external quantum efficiency can reach ≈3%, which is impressive for BP‐based devices. The results pave the way for the implementation of p‐BP/n‐InSe heterostructure as a promising candidate for future multifunctional optoelectronics and, especially, polarization‐sensitive applications. Abstract : A vertical van der Waals heterojunction between few‐layer p‐black phosphorus (BP) and n‐InSe is constructed. The photocurrent anisotropy ratio of the device can reach 0.83, substantially higher than those of reported BP‐based photodetectors. Moreover, this device features a wide‐range, fast, self‐powered, and gate‐modulated photoresponse. These results demonstrate the heterojunction as a promising candidate for multifunctional optoelectronics, especially, highly polarization‐sensitive applications.