Challenging endeavor to integrate gallium and carbon via direct bonding to evolve GaN on diamond architecture. (1st January 2018)

• Record Type: Journal Article
• Authors: Kim, Jong Cheol; Lee, Jinhyung; Kim, Jongsik; Singh, Rajiv K.; Jawali, Puneet; Subhash, Ghatu; Lee, Haigun; Arjunan, Arul Chakkaravarthi
• Is Part Of: Scripta materialia. Number 142(2018)
• Page Start: 138
• Page End: 142
• Publication Date: 2018-01-01
• Subjects: GaN on diamond -- Spark plasma sintering -- Direct bonding -- Heat dissipation -- Immiscibility between Ga and C; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.08.041
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: This paper depicts efforts for fabricating GaN on diamond microstructure through direct bonding between Ga and C, while excluding the use of adhesive interlayer during spark plasma sintering (SPS) process. The resulting GaN on diamond architecture is seemingly successful, as suggested by macroscopic morphological observations. The microscopic inspection using high-resolution transmission electron microscopy (HRTEM), however, shows a unique, off-the-chart interlayer configuration, wherein the components are migrated, etched, or fused to tentatively form multiple crystal phases. These phases can be constructed based on their utmost stabilities among all possible phases thermodynamically driven under or near the SPS conditions. Graphical abstract: