Nickel Doping in Atomically Thin Tin Disulfide Nanosheets Enables Highly Efficient CO2 Reduction. Issue 34 (7th August 2018)

• Record Type: Journal Article
• Authors: Zhang, An; He, Rong; Li, Huiping; Chen, Yijun; Kong, Taoyi; Li, Kan; Ju, Huanxin; Zhu, Junfa; Zhu, Wenguang; Zeng, Jie
• Is Part Of: Angewandte Chemie international edition. Volume 57:Issue 34(2018)
• Page Start: 10954
• Page End: 10958
• Publication Date: 2018-08-07
• Subjects: atomically thin nanosheets -- CO2 electroreduction -- nickel doping -- tin disulfide; Chemistry -- Periodicals; 540
• DOI: 10.1002/anie.201806043
• Languages: English
• ISSNs: 1433-7851

Abstract

Abstract: Engineering electronic properties by elemental doping is a direct strategy to design efficient catalysts towards CO2 electroreduction. Atomically thin SnS2 nanosheets were modified by Ni doping for efficient electroreduction of CO2 . The introduction of Ni into SnS2 nanosheets significantly enhanced the current density and Faradaic efficiency for carbonaceous product relative to pristine SnS2 nanosheets. When the Ni content was 5 atm %, the Ni‐doped SnS2 nanosheets achieved a remarkable Faradaic efficiency of 93 % for carbonaceous product with a current density of 19.6 mA cm −2 at −0.9 V vs. RHE. A mechanistic study revealed that the Ni doping gave rise to a defect level and lowered the work function of SnS2 nanosheets, resulting in the promoted CO2 activation and thus improved performance in CO2 electroreduction. Abstract : Nickel in thin tin : Atomically thin SnS2 nanosheets were modified by Ni doping for efficient electroreduction of CO2 . Introduction of Ni into SnS2 nanosheets enhanced current density and Faradaic efficiency for carbonaceous product relative to pristine SnS2 nanosheets. When the Ni content was 5 at. %, Faradaic efficiency was 93 % with a current density of 19.6 mA cm −2 at −0.9 V vs. RHE.