Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs. (11th June 2014)

• Record Type: Journal Article
• Authors: Karsenty, A.; Chelly, A.
• Other Names: Mercha Abdelkarim Academic Editor.
• Is Part Of: Active and passive electronic components. Volume 2014(2014)
• Publication Date: 2014-06-11
• Subjects: Electronics -- Periodicals; Passive components -- Periodicals; Electronic apparatus and appliances -- Periodicals; 621.381505
• DOI: 10.1155/2014/697369
• Languages: English
• ISSNs: 0882-7516

Abstract

Abstract : The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing same W/L ratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistanceR SD values were extracted using a method based on Y -function for both the temperatures. IfR SD low values were found for UTB, very high values (>1 M Ω ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm 2 / Vs ) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of the Y -analysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.