Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting. (25th October 2015)

• Record Type: Journal Article
• Authors: Jeng, Shyr-Long; Wu, Chih-Chiang; Chieng, Wei-Hua
• Other Names: Liao Meiyong Academic Editor.
• Is Part Of: Journal of nanomaterials. Volume 2015(2015)
• Publication Date: 2015-10-25
• Subjects: Nanostructured materials -- Periodicals; Nanotechnology -- Periodicals; Nanomatériaux; Nanostructured materials; Nanotechnology; Nanostructures; Nanotechnology; Periodicals; Fulltext; Internet Resources; Periodicals; 620.115
• DOI: 10.1155/2015/478375
• Languages: English
• ISSNs: 1687-4110

Abstract

Abstract : This study examined the output electrical characteristics—current-voltage ( I - V ) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.