Study of Linearity and Power Consumption Requirements of CMOS Low Noise Amplifiers in Context of LTE Systems and Beyond. (4th March 2014)

• Record Type: Journal Article
• Authors: Szczepkowski, Grzegorz; Farrell, Ronan
• Other Names: Hwang Y.-S. Academic Editor.; Snider G. Academic Editor.
• Is Part Of: ISRN electronics. Volume 2014(2014)
• Publication Date: 2014-03-04
• Subjects: Electronics -- Periodicals; Electronics; Electronic journals; Periodicals; 621.381
• DOI: 10.1155/2014/391240
• Languages: English
• ISSNs: 2090-8679

Abstract

Abstract : This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2 dB/mW is expected and will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices, active antenna arrays, and base stations operating in small cells.