Fully Programmable Gaussian Function Generator Using Floating Gate MOS Transistor. (20th November 2012)
- Record Type:
- Journal Article
- Title:
- Fully Programmable Gaussian Function Generator Using Floating Gate MOS Transistor. (20th November 2012)
- Main Title:
- Fully Programmable Gaussian Function Generator Using Floating Gate MOS Transistor
- Authors:
- Srivastava, Richa
Gupta, Maneesha
Singh, Urvashi - Other Names:
- Kwon J.-M. Academic Editor.
Rotondaro A. L. P. Academic Editor. - Abstract:
- Abstract : Floating gate MOS (FGMOS) based fully programmable Gaussian function generator is presented. The circuit combines the tunable property of FGMOS transistor, exponential characteristics of MOS transistor in weak inversion, and its square law characteristic in strong inversion region to implement the function. Two-quadrant current mode squarer is the core subcircuit of Gaussian function generator that helps to implement full Gaussian function for positive as well as negative input current. FGMOS implementation of the circuit reduces the current mismatching error and increases the tunability of the circuit. The performance of circuit is verified at 1.8 V in TSMC 0.18 μ m CMOS, BSIM3, and Level 49 technology by using Cadence Spectre simulator.
- Is Part Of:
- ISRN electronics. Volume 2012(2012)
- Journal:
- ISRN electronics
- Issue:
- Volume 2012(2012)
- Issue Display:
- Volume 2012, Issue 2012 (2012)
- Year:
- 2012
- Volume:
- 2012
- Issue:
- 2012
- Issue Sort Value:
- 2012-2012-2012-0000
- Page Start:
- Page End:
- Publication Date:
- 2012-11-20
- Subjects:
- Electronics -- Periodicals
Electronics
Electronic journals
Periodicals
621.381 - Journal URLs:
- https://www.hindawi.com/journals/isrn/contents/isrn.electronics/ ↗
- DOI:
- 10.5402/2012/148492 ↗
- Languages:
- English
- ISSNs:
- 2090-8679
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library HMNTS - ELD Digital store
- Ingest File:
- 10717.xml