Twist angle-dependent conductivities across MoS2/graphene heterojunctions. Issue 1 (December 2018)

• Record Type: Journal Article
• Authors: Liao, Mengzhou; Wu, Ze-Wen; Du, Luojun; Zhang, Tingting; Wei, Zheng; Zhu, Jianqi; Yu, Hua; Tang, Jian; Gu, Lin; Xing, Yanxia; Yang, Rong; Shi, Dongxia; Yao, Yugui; Zhang, Guangyu
• Is Part Of: Nature communications. Volume 9:Issue 1(2018)
• Page Start: 1
• Page End: 6
• Publication Date: 2018-12
• Subjects: Biology -- Periodicals; Physical sciences -- Periodicals; 505
• DOI: 10.1038/s41467-018-06555-w
• Languages: English
• ISSNs: 2041-1723

Abstract

Abstract Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2 /graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2 /graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene. Twisting vertically stacked individual layers of two-dimensional materials can trigger exciting fundamental physics and advanced electronic device applications. Here, the authors report five times enhancement in vertical heterojunction conductivity on rotating MoS2 over graphene.