Record Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cells Utilizing 2D/3D Perovskite Heterostructure. Issue 21 (24th April 2019)

• Record Type: Journal Article
• Authors: Gharibzadeh, Saba; Abdollahi Nejand, Bahram; Jakoby, Marius; Abzieher, Tobias; Hauschild, Dirk; Moghadamzadeh, Somayeh; Schwenzer, Jonas A.; Brenner, Philipp; Schmager, Raphael; Haghighirad, Amir Abbas; Weinhardt, Lothar; Lemmer, Uli; Richards, Bryce S.; Howard, Ian A.; Paetzold, Ulrich W.
• Is Part Of: Advanced energy materials. Volume 9:Issue 21(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-24
• Subjects: 2D Ruddlesden–Popper -- 2D/3D perovskite heterostructure -- metal halide perovskites -- photovoltaics -- solar cells -- wide bandgap; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201803699
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract: In this work, the authors realize stable and highly efficient wide‐bandgap perovskite solar cells that promise high power conversion efficiencies (PCE) and are likely to play a key role in next generation multi‐junction photovoltaics (PV). This work reports on wide‐bandgap (≈1.72 eV) perovskite solar cells exhibiting stable PCEs of up to 19.4% and a remarkably high open‐circuit voltage ( V OC ) of 1.31 V. The V OC ‐to‐bandgap ratio is the highest reported for wide‐bandgap organic−inorganic hybrid perovskite solar cells and the V OC also exceeds 90% of the theoretical maximum, defined by the Shockley–Queisser limit. This advance is based on creating a hybrid 2D/3D perovskite heterostructure. By spin coating n ‐butylammonium bromide on the double‐cation perovskite absorber layer, a thin 2D Ruddlesden–Popper perovskite layer of intermediate phases is formed, which mitigates nonradiative recombination in the perovskite absorber layer. As a result, V OC is enhanced by 80 mV. Abstract : By coating n ‐butylammonium bromide on wide‐bandgap double‐cation perovskite absorber layers ( E G ≈ 1.72 eV), a thin 2D Ruddlesden–Popper perovskite layer of intermediate phase is formed. The resulting heterostructure mitigates nonradiative recombination and enables a high open‐circuit voltage of up to 1.31 V and stable power output efficiencies of up to 19.4%.