Reaction‐bonded B4C/SiC composites synthesized by microwave heating. Issue 4 (29th March 2019)

• Record Type: Journal Article
• Authors: Dutto, Mathieu; Goeuriot, Dominique; Saunier, Sébastien; Marinel, Sylvain; Frage, Nachum; Hayun, Shmuel
• Is Part Of: International journal of applied ceramic technology. Volume 16:Issue 4(2019)
• Page Start: 1287
• Page End: 1294
• Publication Date: 2019-03-29
• Subjects: boron carbide -- microwaves -- reaction bonding; Ceramics -- Periodicals; Ceramics -- Technological innovations -- Periodicals; 620.1405
• DOI: 10.1111/ijac.13211
• Languages: English
• ISSNs: 1546-542X

Abstract

Abstract: The reaction‐bonding technique was used to synthesize boron carbide (B4 C) ‐ silicon carbide (SiC) composites by microwave heating. Preforms of porous B4 C were obtained by compaction followed or not by partial densification. Then, the material was infiltrated by molten silicon under a microwave heating. The influence of the thermal cycles (T: 1400‐1500°C, t : 5‐120 minutes) is low. The hardness of boron carbide is comparable to that of alumina (15‐19 GPa) for a much lower density (≈2.5 g/cm 3 for B4 C‐based material instead of 3.95 g/cm 3 for alumina). These properties make this composite, obtained by microwave heating, a good candidate for ballistic applications.