High thermal conductivity silicon nitride ceramics prepared by pressureless sintering with ternary sintering additives. Issue 4 (13th March 2019)

• Record Type: Journal Article
• Authors: Duan, Yusen; Zhang, Jingxian; Li, Xiaoguang; Bai, Hainan; Sajgalik, Pavol; Jiang, Dongliang
• Is Part Of: International journal of applied ceramic technology. Volume 16:Issue 4(2019)
• Page Start: 1399
• Page End: 1406
• Publication Date: 2019-03-13
• Subjects: pressureless sintering -- silicon nitride -- ternary sintering additives -- thermal conductivity; Ceramics -- Periodicals; Ceramics -- Technological innovations -- Periodicals; 620.1405
• DOI: 10.1111/ijac.13220
• Languages: English
• ISSNs: 1546-542X

Abstract

Abstract: Silicon nitride ceramics were pressureless sintered at low temperature using ternary sintering additives (TiO2, MgO and Y2 O3 ), and the effects of sintering aids on thermal conductivity and mechanical properties were studied. TiO2 –Y2 O3 –MgO sintering additives will react with the surface silica present on the silicon nitride particles to form a low melting temperature liquid phase which allows liquid phase sintering to occur and densification of the Si3 N4 . The highest flexural strength was 791(±20) MPa with 12 wt% additives sintered at 1780°C for 2 hours, comparable to the samples prepared by gas pressure sintering. Fracture toughness of all the specimens was higher than 7.2 MPa·m 1/2 as the sintering temperature was increased to 1810°C. Thermal conductivity was improved by prolonging the dwelling time and adopting the annealing process. The highest thermal conductivity of 74 W/(m∙K) was achieved with 9 wt% sintering additives sintered at 1810°C with 4 hours holding followed by postannealing.