Cite
HARVARD Citation
Zhou, G. et al. (2018). High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth. Advanced materials. 30 (36), p. n/a. [Online].
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Zhou, G. et al. (2018). High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth. Advanced materials. 30 (36), p. n/a. [Online].