Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell. (1st September 2009)

• Record Type: Journal Article
• Authors: Güllü, Ömer
• Other Names: Yakuphanoglu Fahrettin Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2009(2009)
• Publication Date: 2009-09-01
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2009/374301
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : An Al/methyl-red/ p -InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage ( I-V ) and capacitance-voltage-frequency ( C-V-f ) measurements at room temperature. From dark I-V characteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltageV oc of 0.38 V and short-circuit currentI sc of 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al/methyl-red/ p -InP devices were extracted as 1.27 eV and3.46 × 10 17 cm - 3 from linear region of itsC - 2 - V characteristics, respectively. The difference betweenΦ b ( I-V ) andΦ b ( C-V ) for Al/methyl-red/ p -InP device was attributed the different nature of the I-V and C-V measurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al/methyl-red/ p -InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from2 .96 × 10 12 cm - 2 eV - 1 and4.96 × 10 - 6 s at (1.11-E v ) eV to5.19 × 10 12 cm - 2 eV - 1 and9.39 × 10 - 6 s at (0.79-E v ) eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results.