Effects of W/Ir Top Electrode on Resistive Switching and Dopamine Sensing by Using Optimized TaOx‐Based Memory Platform. Issue 24 (24th November 2017)

• Record Type: Journal Article
• Authors: Samanta, Subhranu; Maikap, Siddheswar; Roy, Anisha; Jana, Surajit; Qiu, Jian‐Tai
• Is Part Of: Advanced materials interfaces. Volume 4:Issue 24(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-11-24
• Subjects: complementary resistive switching -- diode -- dopamine sensing -- TaOx/Ta2O5 -- W/Ir top electrode; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201700959
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: Resistive switching with best structural optimization by taking 100 devices of each structure including tungsten/iridium (W/Ir) top electrode effects and dopamine sensing by inserting 2 nm thick Al2 O3 interfacial layer in TaO x ‐based memory platform are reported for the first time. Statistical analysis of device‐to‐device switching uniformity for the formation voltage, low resistance state, and high resistance state is executed at low current compliance of 30 μA by inserting 2 nm thick Al2 O3 layer underneath of W electrode in W/Al2 O3 /TaO x /TiN structure. Incorporation of defective layer (TaO x ) into Ta2 O5 layer is clearly observed from the high‐resolution transmission electron microscope image of stressed device. A long program/erase endurance of >10 8 cycles under low current of 30 μA with pulse width of 100 ns and retention of >900 h at 85 °C is obtained. Diode‐like rectifying at 1 μA with higher ratio of >5000, nonlinearity factor of >300, and complementary resistive switching are achieved by using Ir electrode. Transport mechanism is dominated by Schottky conduction. Dopamine at a low concentration of 1 × 10 −12 m is detected through porous Ir in Ir/Al2 O3 /TaO x /TiN structure owing to oxidation at the Ir/Al2 O3 interface for the first time, which will be useful for early diagnosis of human diseases. Abstract : Resistive switching including tungsten/iridium top electrode effects, a long program/erase endurance of >10 8 cycles under low current operation of 30 µA with pulse width of 100 ns, and 1 × 10 −12 m dopamine sensing by optimized 2 nm thick Al2 O3 interfacial layer in TaO x ‐based memory platform are reported for the first time.