A Low-Power Voltage Limiter/Regulator IC in Standard Thick-Oxide 130 nm CMOS for Inductive Power Transfer Application. (17th December 2014)

• Record Type: Journal Article
• Authors: Lapshev, Stepan; Hasan, S. M. Rezaul
• Other Names: Liaw C. M. Academic Editor.
• Is Part Of: Advances in power electronics. Volume 2014(2014)
• Publication Date: 2014-12-17
• Subjects: Power electronics -- Periodicals; Power electronics; Periodicals; Electronic journals; 621.317
• DOI: 10.1155/2014/317523
• Languages: English
• ISSNs: 2090-181X

Abstract

Abstract : This paper presents a novel CMOS low-power voltage limiter/regulator circuit with hysteresis for inductive power transfer in an implanted telemetry application. The circuit controls its rail voltage to the maximum value of 3 V DC employing 100 mV of comparator hysteresis. It occupies a silicon area of only 127 µ m × 125 µ m using the 130 nm IBM CMOS process. In addition, the circuit dissipated less than 1 mW and was designed using thick-oxide 3.6 V NMOS and PMOS devices available in the process library.