Van Der Waals Epitaxy: Ultrasensitive Photoresponsive Devices Based on Graphene/BiI3 van der Waals Epitaxial Heterostructures (Adv. Funct. Mater. 23/2018). (4th June 2018)

• Record Type: Journal Article
• Authors: Chang, Po‐Han; Li, Chia‐Shuo; Fu, Fang‐Yu; Huang, Kuo‐You; Chou, Ang‐Sheng; Wu, Chih‐I
• Is Part Of: Advanced functional materials. Volume 28:Number 23(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-06-04
• Subjects: bismuth iodide -- graphene -- photodetectors -- photoemission spectroscopy -- van der Waals epitaxy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201870160
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number1800179, Chih‐I Wu and co‐workers demonstrate that epitaxial growth of layered bismuth iodide (BiI3 ) on graphene shows flat morphologies and excellent crystallinities because of weak van der Waals interactions at the graphene/BiI3 interface. Hybrid photodetectors based on graphene/BiI3 heterostructures demonstrate superior photosensitivity and fast response time. Image designed by Siang‐Jyuan Yan, Chia‐Shuo Li, and Po‐Han Chang.