Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application. Issue 27 (27th May 2018)

• Record Type: Journal Article
• Authors: Sun, Jing; Wang, Hong; Song, Fang; Wang, Zhan; Dang, Bingjie; Yang, Mei; Gao, Haixia; Ma, Xiaohua; Hao, Yue
• Is Part Of: Small. Volume 14:Issue 27(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-27
• Subjects: flexible electronics -- memristors -- physically transient -- secure electronics -- threshold switching (TS) devices; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201800945
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract: Transient memristors are prospective candidates for both secure memory systems and biointegrated electronics, which are capable to physically disappear at a programmed time with a triggered operation. However, the sneak current issue has been a considerable obstacle to achieve high‐density transient crossbar array of memristors. To solve this problem, it is necessary to develop a transient switch device to turn the memory device on and off controllably. Here, a dissolvable and flexible threshold switching (TS) device with a vertically crossed structure is introduced, which exhibits a high selectivity of 10 7, steep turn‐on slope of <8 mV dec −1, and fast ON/OFF switch speed within 50/25 ns. Triggered failure could be achieved after soaking the device in deionized water for 8 min at room temperature. Furthermore, a water‐assisted transfer printing method is used to fabricate flexible and transient TS device arrays for bioresorbable systems, in which none of any significant degradation is observed under a bending radius of 2 mm. Integrating the selector with a transient memristor is capable of 10 7 Gb memory implementation, indicating that the transient TS device could provide great opportunities to achieve highly integrated transient memory arrays. Abstract : Physically transient and flexible threshold switching devices based on MgO dielectric are successfully demonstrated. Triggered failure is completed after soaking the device in deionized water for 8 min. No significant degradation is observed under a bending radius of 2 mm. Such a dissolvable selector device has great potential for both secure memory systems and biointegrated electronic applications.