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HARVARD Citation
Goes, W. et al. (2018). Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectronics and reliability. pp. 286-320. [Online].
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Goes, W. et al. (2018). Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectronics and reliability. pp. 286-320. [Online].