Comparative Assessment of GaN as a Microwave Source with Si and SiC for Mixed Mode Operation at Submillimetre Wave Band of Frequency. (14th February 2016)

• Record Type: Journal Article
• Authors: Panda, Pranati; Padhi, Satya Narayan; Dash, Gana Nath
• Other Names: Sales Maicas Salvador Academic Editor.
• Is Part Of: International journal of microwave science and technology. Volume 2016(2016)
• Publication Date: 2016-02-14
• Subjects: Radio frequency -- Periodicals; Microwave circuits -- Periodicals; Radiofréquences; Circuits pour micro-ondes; Microwave circuits; Radio frequency; Periodicals; Electronic journals; 621.3813
• DOI: 10.1155/2016/4370345
• Languages: English
• ISSNs: 1687-5826

Abstract

Abstract : The potentials of GaN, SiC, and Si for application as microwave sources in mixed tunnelling avalanche transit time mode operation at submillimetre wave (sub-mm wave) frequency around 0.35 terahertz (THz) are investigated using some computer simulation methods. Design criteria to choose width, doping concentration, and area are highlighted. From the results of our simulation we observed that the Si diode produces the least power output of 41 mW followed by the GaN diode with 760 mW and the SiC diode with 2.89 W. In addition, the GaN diode has more noise than the SiC diode (by 5 dB) as well as the Si diode (by 10 dB). The drastically different performance between the GaN and the SiC diode is attributed to the incorporation of disparate carrier velocity in GaN which were not being used by other authors. In spite of the low power and high noise of the GaN compared to the SiC diode, the presence of several peaks in the mean square noise voltage curves and the existence of several minima in the noise measure curves would open a new direction in the design of GaN low-noise ATT diodes capable of multifrequency tuning like a DAR diode.