Aligned van der Waals Coupled Growth of Carbon Nanotubes to Hexagonal Boron Nitride. Issue 21 (12th September 2018)

• Record Type: Journal Article
• Authors: Nasseri, Mohsen; Ansary, Armin; Boland, Mathias J.; Strachan, Douglas R.
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 21(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-09-12
• Subjects: aligned growth -- carbon nanotubes -- crystallographic -- hexagonal boron nitride -- van der Waals; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201800793
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract: 1D carbon nanotubes (CNTs) are grown on hexagonal boron nitride (hBN) surfaces. The nanotubes show clear preference to align to specific crystal directions of the hBN substrate. Raman spectra confirm that the nanotubes consist of sp 2 carbon, while nanomanipulation shows that they are van der Waals coupled to the underlying hBN substrate. Scanning conductance and electric force microscopy show that the CNTs have significantly greater electrical conductance compared to the hBN. This integrated aligned growth of materials with similar lattices, yet having dissimilar dimensionality and electrical conducting properties, provides a promising route to achieving intricate nanoscale electrical circuits on high‐quality insulating substrates. Abstract : Aligned growth is obtained for van der Waals coupled 1D carbon nanotubes on the layered insulating 2D material hexagonal boron nitride. The direct integrated and oriented growth of components consisting of contrasting material properties and dimensionalities provides an important step to developing intricate nanoscale electrical circuits on high‐quality insulating substrates.