Three-Dimensional Drift-Diffusion Model for Simulation and Investigation of Bordering Effects in Silicon Solar Cells. (2019)

• Record Type: Journal Article
• Authors: Benaichi, M.; Chetouani, A.; Karkri, A.; Moussaid, D.; Elqabbaj, S.E.
• Is Part Of: Materials today. Volume 13:Part 3(2019)
• Page Start: 630
• Page End: 636
• Publication Date: 2019
• Subjects: Solar cells -- p-n junction -- Bordering effects -- 3D model simulation -- Drift-diffusion model -- Boundary conditions -- Shockley-Read-Hall; Materials science -- Congresses -- Periodicals; 620.1
• DOI: 10.1016/j.matpr.2019.04.022
• Languages: English
• ISSNs: 2214-7853

Abstract

Abstract: In this paper, the influence of bordering effects on solar cells parameters is investigated through a three-dimensional model, which these effects are ignored in one dimensional model cases. They are incorporated in two and three-dimensional models by an additional recombination term in the drift-diffusion equations. The additional recombination term is calculated via the Schockley-Red-Hall theory. The model includes also radiative recombination process and neglects auger recombination (considered only in heavily doped p-n junctions). This model is based on the solution of Poisson's equation and continuity equations of electrons and holes. At metallic contacts, Dirichlet-type boundary conditions are applied, while Neumann-type boundary conditions are used in other interfaces of the device. This modified model was tested on a simple Silicon p-n junction to show the contribution of the bordering effects in the carrier and currents densities.