DS Schottky barrier cylindrical GAA MOSFET: nanosensor for biochips. Issue 1 (8th April 2016)

• Record Type: Journal Article
• Authors: Kumar, Manoj; Haldar, Subhasis; Gupta, Mridula; Gupta, Radhey S.
• Is Part Of: Nanomaterials and energy. Volume 5:Issue 1(2016)
• Page Start: 10
• Page End: 19
• Publication Date: 2016-04-08
• Subjects: DNA -- lab on a chip -- protein; Nanostructured materials -- Periodicals; Nanostructures -- Periodicals; 620.115
• DOI: 10.1680/jnaen.15.00006
• Languages: English
• ISSNs: 2045-9831

Abstract

Abstract : This paper presents an extensive mathematical study of a proposed nanogap-embedded dopant-segregated (DS) Schottky barrier (SB) cylindrical gate all-around (CGAA) metal-oxide-semiconductor field-effect transistor (MOSFET) of negatively/positively charged and neutral species observed by numerical simulation using an Atlas three-dimensional device simulator for electrical and label-free detection of bio/chemical (DNA, pH) and neutral species (protein) respectively as a nanosensor in the biomedical field at high sensitivity for direct electronic readout. This is the first time that the use of a nanogap-embedded DS-SB-CGAA MOSFET as a bio/chemical sensor has been reported. The threshold voltage ( V th ) shift and change in current are considered as sensing metrics to detect biological or chemical species when they are immobilized in the carvel-built region. The shift in on current ( I on ) of the nanogap-embedded DS-SB-CGAA MOSFET is also taken as a sensing metric, and better performance is observed compared to a conventional SB-CGAA MOSFET sensor. It is advantageous in terms of its low power/energy consumption as well as from the point of view of integration with the forthcoming silicon-based lab-on-chip systems due to the compatibility with the complementary metal-oxide semiconductor process.