Effect of substitution and impurities on dielectric properties and resistivity of CaCu3Ti4O12. Issue 6 (1st December 2013)

• Record Type: Journal Article
• Authors: Arnold, Bradley; Razdan, Vishnu; Yanamaddi, Ravali; Gillan, Margaret; House, David; Singh, Narsingh B.
• Is Part Of: Emerging materials research. Volume 2:Issue 6(2013)
• Page Start: 344
• Page End: 347
• Publication Date: 2013-12-01
• Subjects: crystal; -- characterization; -- dielectric; Materials -- Periodicals; 620.11
• DOI: 10.1680/emr.13.00011
• Languages: English
• ISSNs: 2046-0147

Abstract

Abstract : The authors have performed the synthesis and grain growth of pure calcium copper titanate (CaCu3 Ti4 O12 or CCTO) compound and its derivatives by substituting silicon CaCu3 Si x Ti4− x O12 (CCSTO) to determine the effect on dielectric properties and resistivity. The authors observed significant increase in the resistivity even with small concentration of silicon. Concentration above 5% did not produce any significant advantages; they also observed a similar increase in resistivity when CCSTO is doped with nickel. In a separate experiment, the authors soaked the CCSTO before grain growth in an organic melt. Soaking also increased the resistivity by several orders of magnitude. The authors observed almost three orders of magnitude higher resistivity in CCSTO compared with CCTO material processed under identical conditions.