Mechanical and electrical properties of NbMoTaW refractory high-entropy alloy thin films. (April 2019)

• Record Type: Journal Article
• Authors: Kim, Hanuel; Nam, Seungjin; Roh, Aeran; Son, Myungwoo; Ham, Moon-Ho; Kim, Jae-Hun; Choi, Hyunjoo
• Is Part Of: International journal of refractory metals & hard materials. Volume 80(2019)
• Page Start: 286
• Page End: 291
• Publication Date: 2019-04
• Subjects: Refractory high-entropy alloy -- Thin film -- DC magnetron sputtering -- Mechanical properties -- Electrical properties; Heat resistant alloys -- Periodicals; Refractory materials -- Periodicals; Metallography -- Periodicals; Alliages réfractaires -- Périodiques; Matériaux réfractaires -- Périodiques; Métallographie -- Périodiques; Heat resistant alloys; Metallography; Refractory materials; Periodicals; Electronic journals; 669.73
• DOI: 10.1016/j.ijrmhm.2019.02.005
• Languages: English
• ISSNs: 0263-4368

Abstract

Abstract: Refractory high-entropy alloys (RHEAs) have opened a new chapter in the development of structural materials for use at high temperatures owing to their outstanding mechanical properties and thermal stability. In this study, we developed a NbMoTaW RHEA thin film via direct current magnetron sputtering from a single target that was synthesized by sintering a mixture of multiple elemental powders. The as-deposited thin film exhibited a single nanocrystalline solid-solution phase with body-centered cubic structure. Moreover, the film had a high hardness of 12 GPa and electrical resistivity of 168 μΩ·cm due to severe lattice distortion and the presence of nanoscale grains. Hence, RHEA films can be used as a hard coating for protective layers and as electrical resistors in nanofabricated devices owing to their favorable combination of hardness and electrical resistivity. Highlights: NbMoTaW RHEA thin films was produced via DC magnetron sputtering from a single target. The NbMoTaW thin film presented a single solid-solution phase with a BCC structure. The constituent elements of the NbMoTaW RHEA was uniformly distributed in the film. The NbMoTaW thin film revealed high hardness of 12 GPa and electrical resistivity of 168 μΩ·cm.