Pressure-induced phase transitions for goethite investigated by Raman spectroscopy and electrical conductivity. Issue 1 (2nd January 2019)

• Record Type: Journal Article
• Authors: Liu, Kaixiang; Dai, Lidong; Li, Heping; Hu, Haiying; Zhuang, Yukai; Yang, Linfei; Pu, Chang; Hong, Meiling
• Is Part Of: High pressure research. Volume 39:Issue 1(2019)
• Page Start: 106
• Page End: 116
• Publication Date: 2019-01-02
• Subjects: Goethite -- high pressure -- Raman spectroscopy -- electrical conductivity -- phase transition; High pressure (Science) -- Periodicals; High pressure (Technology) -- Periodicals; 536.41
• DOI: 10.1080/08957959.2019.1572751
• Languages: English
• ISSNs: 0895-7959

Abstract

ABSTRACT: We reported two pressure-induced phase transitions of goethite up to ∼35 GPa using a diamond anvil cell in conjunction with ac impendence spectroscopy, Raman spectra at room temperature. The first pressure-induced phase transition at ∼7.0 GPa is manifested in noticeable changes in six Raman-active modes, two obvious splitting phenomena for the modes and the variations in the slope of conductivity. The second phase transition at ∼20 GPa was characterized by an obviously drop in electrical conductivity and the noticeable changes in the Raman-active modes. The variations in activation energy with increasing pressure were also discussed to reveal the electrical properties of goethite at high pressure.