Analytical Modelling and Performance Analysis of Dielectric Pocket-Induced Double-Gate Tunnel Field-Effect Transistor. Issue 1 (2nd January 2019)

• Record Type: Journal Article
• Authors: Saha, Priyanka; Kumari, Tripty; Sarkar, Subir Kumar
• Is Part Of: IETE technical review. Volume 36:Issue 1(2019)
• Page Start: 17
• Page End: 26
• Publication Date: 2019-01-02
• Subjects: Band to band tunnelling -- Dielectric-pocket -- Kane's model -- Poisson's equation -- TFET; Telecommunication -- Periodicals; Electronics -- Periodicals; Electronics; Telecommunication; Periodicals; 621.38
• DOI: 10.1080/02564602.2017.1381049
• Languages: English
• ISSNs: 0256-4602

Abstract

ABSTRACT: In this paper, a dielectric pocket-induced double-gate tunnel field-effect transistor is presented for improving the ON state current and suppressing the ambipolar conduction of the device. Introduction of dielectric pocket at the junction of both source and drain helps to tune the tunnelling barrier and subsequently controls the tunnelling current. A physics-based analytical model of surface potential and electric field is deduced by solving 2D Poisson's equation.Tunnelling current is then derived using Kane's model. The performance of this structure is then studied by varying the dielectric material of the pocket at source/drain junctions. Analytical results have been compared with the SILVACO ATLAS simulated results for verification of our model.