Abnormal diffusion behaviors of Cu atoms in van der Waals layered material MoS2. Issue 20 (2nd May 2019)

• Record Type: Journal Article
• Authors: Zhang, Cai-Xin; Li, Qianze; Tang, Li-Ming; Yang, Kaike; Xiao, Jin; Chen, Ke-Qiu; Deng, Hui-Xiong
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 20(2019)
• Page Start: 6052
• Page End: 6058
• Publication Date: 2019-05-02
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc01626k
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : We investigated the diffusion properties of metal atoms in van der Waals layered materials using first-principles calculations combined with group theory analysis. We found that the diffusion rate of Cu in bulk MoS2 is much faster than other investigated metal atoms, whereas the diffusion rate of Cu in monolayer MoS2 is the slowest one among investigated systems. Abstract : We investigated the diffusion properties of metal atoms in van der Waals layered materials using first-principles calculations combined with group theory analysis. We found that there is an abnormal diffusion behavior of Cu in MoS2, which originated from the competition of the electronic and strain energies. Although the atom diffusing in bulk MoS2 constantly changes the symmetry of the system with reduced electronic energy due to p–d coupling between occupied Cu d and unoccupied anion p states, the strain energy is dominant. As a result, the energy barrier of metal atoms is mainly determined by their size, making the diffusion rate of Cu faster than those of other metal atoms. Nevertheless, in the monolayer MoS2, the strain energy is negligible and the electronic coupling is significant, so that the strong d–d coupling between occupied Cu d and unoccupied cation d states leads to the highest diffusion barrier of Cu atoms.