High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium doping. (15th April 2019)

• Record Type: Journal Article
• Authors: Wang, Yong; Wang, Tianbo; Liu, Guangyu; Guo, Tianqi; Li, Tao; Lv, Shilong; Cheng, Yan; Song, Sannian; Ren, Kun; Song, Zhitang
• Is Part Of: Scripta materialia. Number 164(2019)
• Page Start: 25
• Page End: 29
• Publication Date: 2019-04-15
• Subjects: High thermal stability -- Fast speed -- Ge-Sb-Te alloys -- Phase change memory; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2019.01.035
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising host material for optimization, based on which the well-known golden composition is developed. Here, Sc doped Ge2 Sb1 Te2 has been proposed for phase change memory (PCM) application, showing higher thermal stability and faster operation speed than those of the golden composition. The fast speed of 40 ns, high 10-year data retention of 160 °C, and good endurance of 6×10 5 cycles have made Sc0.2 Ge2 Sb1 Te2 a promising candidate for PCM application. The impact of Sc on the microstructure is believed to be essential for those improvements in PCM.