Effects of Fe doping on the photoelectrochemical properties of CuO photoelectrodes. (15th April 2019)

• Record Type: Journal Article
• Authors: Oh, Jaejin; Ryu, Hyukhyun; Lee, Won-Jae
• Is Part Of: Composites. Number 163(2019)
• Page Start: 59
• Page End: 66
• Publication Date: 2019-04-15
• Subjects: Photoelectrochemical (PEC) -- Photoelectrode -- Fe-doped CuO -- Modified chemical bath deposition (M-CBD); Composite materials -- Periodicals; Materials science -- Periodicals; Composite materials; Periodicals; Electronic journals; 620.118
• DOI: 10.1016/j.compositesb.2018.11.041
• Languages: English
• ISSNs: 1359-8368

Abstract

Abstract: In this study, CuO photoelectrodes doped with various iron concentrations were grown by using a modified chemical bath deposition method. We investigated the effects of the iron doping concentration on the morphological, structural, optical, electrical and photoelectrochemical properties of the CuO photoelectrode by using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectrophotometry (UV-Vis), electrochemical impedance spectroscopy (EIS) and potentiostatic/galvanostatic analysis, respectively. In this study, the smallest dislocation density, highest charge carrier density and lowest charge transfer resistance values were obtained from the sample with an Fe doping concentration of 2 at%. As a result, the maximum photocurrent density value of −1.44 mA/cm 2 was obtained at −0.55 V (vs. SCE) from the photoelectrode with an Fe doping concentration of 2 at%, which was 53% higher than that of the undoped CuO photoelectrode.