Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices (Phys. Status Solidi A 10∕2019). Issue 10 (23rd May 2019)

• Record Type: Journal Article
• Authors: Hourai, Masataka; Nagashima, Toru; Nishikawa, Hideshi; Sugimura, Wataru; Ono, Toshiaki; Umeno, Shigeru
• Other Names: Murphy John D. guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 10(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-05-23
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201970035
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Point Defects Point defect‐controlled Czochralski silicon (CZ‐Si) crystal growth technology is reviewed by manipulating the v/G ratio, where v is the growth rate and G is the axial temperature gradient in crystals. Cover: Schematics of v/G defect maps for CZ‐Si crystals, and defect pattern changes a), b), and c) with decreasing crystal pulling rate in conventional hot zone, and d) growth concept for grown‐in defect‐free crystal by using improved hot zone. More details can be found in article number1800664 by Masataka Hourai, Shigeru Umeno and co‐workers.