Ultrawide‐Bandgap Semiconductors: Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors (Adv. Funct. Mater. 9/2019). (27th February 2019)

• Record Type: Journal Article
• Authors: Xie, Chao; Lu, Xing‐Tong; Tong, Xiao‐Wei; Zhang, Zhi‐Xiang; Liang, Feng‐Xia; Liang, Lin; Luo, Lin‐Bao; Wu, Yu‐Cheng
• Is Part Of: Advanced functional materials. Volume 29:Number 9(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-27
• Subjects: deep ultraviolet -- light detection -- optoelectronic devices -- solar‐blind -- ultrawide‐bandgap semiconductors; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201970057
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Solar‐blind deep ultraviolet light photodetectors (DUVPDs) have been receiving increasing research interest lately due to their promising application in military surveillance, target detection, and flame detection. In article number1806006, Feng‐Xia Liang, Lin‐Bao Luo, Yu‐Cheng Wu, and co‐workers summarize the recent advances in the development of various DUVPDs based on different kinds of inorganic ultrawide bandgap semiconductors such as Ga2 O3, Mg x Zn1− x O, III‐nitride compounds, and diamonds.