Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3. (25th February 2019)

• Record Type: Journal Article
• Authors: Wan, Siyuan; Li, Yue; Li, Wei; Mao, Xiaoyu; Wang, Chen; Chen, Chen; Dong, Jiyu; Nie, Anmin; Xiang, Jianyong; Liu, Zhongyuan; Zhu, Wenguang; Zeng, Hualing
• Is Part Of: Advanced functional materials. Volume 29:Number 20(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-25
• Subjects: 2D ferroelectric -- FeFET -- nonvolatile memory; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201808606
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract: High‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In2 Se3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In2 Se3 and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α‐In2 Se3 . The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top‐gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 10 5 cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials. Abstract : A prototype of a 2D ferroelectric memory device is demonstrated. The nonvolatile functionality stems from the room‐temperature out‐of‐plane ferroelectricity in ultrathin α‐In2 Se3 . The hybrid ferroelectric field‐effect transistor allows not only the control and probe of electric dipoles, but also the quantitative measurement of the electric polarization in atomically thin van der Waals ferroelectrics.