Temperature-induced transport changes in molecular junctions based on a spin crossover complex. Issue 18 (16th April 2019)

• Record Type: Journal Article
• Authors: Poggini, Lorenzo; Gonidec, Mathieu; Canjeevaram Balasubramanyam, Ram Kumar; Squillantini, Lorenzo; Pecastaings, Gilles; Caneschi, Andrea; Rosa, Patrick
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 18(2019)
• Page Start: 5343
• Page End: 5347
• Publication Date: 2019-04-16
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c8tc06587j
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2 B(pz)2 )2 (phen)] as an active switchable thin film. Abstract : This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2 B(pz)2 )2 (phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.