AlN encapulsated GaN nanowires. (July 2019)

• Record Type: Journal Article
• Authors: Li, Enling; Zheng, Jiangshan; Ma, Deming; Yan, Jie; Cui, Zhen; Peng, Tuo
• Is Part Of: Vacuum. Volume 165(2019)
• Page Start: 81
• Page End: 85
• Publication Date: 2019-07
• Subjects: GaN -- Core-shell structure -- Gas-solid (VS) mechanism -- Chemical vapor deposition (CVD); Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2019.03.029
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: GaN/AlN core-shell nanowires (NWs) were synthesized by a Chemical Vapor Deposition (CVD) through two steps method. GaN core nanowire and AlN shell of each core-shell nanowire are uniform and wurtzite hexagonal single crystal structure. The AlN shell epitaxial grow on GaN core nanowire based on gas-solid (VS) mechanism, and they all grow in [001] direction. The PL property of the GaN/AlN core-shell nanowires shows promising application in ultraviolet photoelectric devices. Highlights: Uniformly AlN-encapulsated GaN nanowires can be synthesized by a CVD through two steps method. AlN shell epitaxial grow on GaN core nanowire based on VS mechanism, and they both grow in [001] direction. The PL property of the GaN/AlN core-shell nanowires indicates great prospects in ultraviolet photoelectric devices.