Lateral Infrared Photovoltaic Effects in Ag-Doped ZnO Thin Films. (31st May 2010)

• Record Type: Journal Article
• Authors: Liu, Wenwei; Zhao, Songqing; Zhao, Kun; Sun, Wei
• Other Names: Pagliaro Mario Academic Editor.
• Is Part Of: International journal of photoenergy. Volume 2010(2010)
• Publication Date: 2010-05-31
• Subjects: Photochemistry -- Periodicals; Photobiology -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Photochimie; Photobiologie; Chimie physique et théorique; Chemistry, Physical and theoretical; Photobiology; Photochemistry; Electronic journals; Periodicals; 541.35
• DOI: 10.1155/2010/793481
• Languages: English
• ISSNs: 1110-662X

Abstract

Abstract : A transient lateral photovoltaic effect has been observed in Ag-doped ZnO thin films. Under the nonuniform irradiation of a 1064 nm pulsed laser, the photovoltaic response shows high sensitivity to the spot position on the film surface. The highest photovoltaic responsivity of 27.1 mV mJ −1 was observed, with a decline time of ~ 1.5 ns and a full width at half-maximum (FWHM) of ~ 4 ns. The photovoltaic position sensitivity can reach about 3.8 mV mJ −1 mm −1 . This paper demonstrates the potential of Ag-doped ZnO films in the position-sensitive infrared detection