Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with Output Power Over 2 Watt. Issue 10 (26th March 2019)

• Record Type: Journal Article
• Authors: Wang, Yixin; Rong, Xin; Ivanov, Sergey; Jmerik, Valentin; Chen, Zhaoying; Wang, Hui; Wang, Tao; Wang, Ping; Jin, Peng; Chen, Yanan; Kozlovsky, Vladimir; Sviridov, Dmitry; Zverev, Michail; Zhdanova, Elena; Gamov, Nikita; Studenov, Valentin; Miyake, Hideto; Li, Hongwei; Guo, Shiping; Yang, Xuelin; Xu, Fujun; Yu, Tongjun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang
• Is Part Of: Advanced optical materials. Volume 7:Issue 10(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-03-26
• Subjects: deep ultraviolet -- high output power -- MOCVD -- GaN/AlN multiple quantum wells -- ultrathin quantum wells -- UVC light sources; Optical materials -- Periodicals; Photonics -- Periodicals; 620.11295
• DOI: 10.1002/adom.201801763
• Languages: English
• ISSNs: 2195-1071

Abstract

Abstract: High‐output‐power electron‐beam (e‐beam) pumped deep ultraviolet (DUV) light sources, operating at 230–270 nm, are achieved by adjusting the well thickness of binary ultrathin GaN/AlN multiple quantum wells. These structures are fabricated on high‐quality thermally annealed AlN templates by metal‐organic chemical vapor deposition. Owing to the reduced dislocation density, large electron–hole overlap, and efficient carrier injection by e‐beam, the DUV light sources demonstrate high output powers of 24.8, 122.5, and 178.8 mW at central wavelengths of 232, 244, and 267 nm, respectively. Further growth optimization and employing an e‐gun with increased beam current lead to a record output power of ≈2.2 W at emission wavelength of ≈260 nm, the key wavelength for water sterilization. This work manifests the practical levels of high‐output‐power DUV light sources operated by using e‐beam pumping method. Abstract : High‐output‐power deep ultraviolet light sources are achieved from the structures of ultrathin GaN/AlN multiple quantum wells. Their emission wavelength varies from 232 to 267 nm, and a record output power of ≈2.2 W at 258 nm is obtained by an electron‐beam excitation for the optimized conditions. These devices manifest great potential in sterilization and water purification, etc.