HIT Solar Cells with N-Type Low-Cost Metallurgical Si. (18th January 2018)

• Record Type: Journal Article
• Authors: Yang, Xing; Bian, Jiangtao; Liu, Zhengxin; Li, Shuai; Chen, Chao; He, Song
• Other Names: Huang Jung Y. Academic Editor.
• Is Part Of: Advances in optoelectronics. Volume 2018(2018)
• Publication Date: 2018-01-18
• Subjects: Optoelectronics -- Periodicals; Optoélectronique; Optoelectronics; Periodicals; 621.381045
• DOI: 10.1155/2018/7368175
• Languages: English
• ISSNs: 1687-563X

Abstract

Abstract : A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.