Contribution of Series Resistance in Modelling of High-Temperature Type II Superlattice p-i-n Photodiodes. (19th November 2012)

• Record Type: Journal Article
• Authors: Wróbel, Jarosław; Martyniuk, Piotr; Rogalski, Antoni
• Other Names: Salvetti Ovidio Academic Editor.
• Is Part Of: Advances in optical technologies. Volume 2012(2012)
• Publication Date: 2012-11-19
• Subjects: Optoelectronics -- Periodicals; Optoelectronics; Physics; Periodicals; Electronic journals; 621.36
• DOI: 10.1155/2012/926365
• Languages: English
• ISSNs: 1687-6393

Abstract

Abstract : We analyze some of the consequences of omitting series resistance in InAs/GaSb p-i-n T2SL photodiode dark current modelling, using simplified p-n junction model. Our considerations are limited to generation-recombination and diffusion-effective carrier lifetimes to show the possible scale of over- or underestimating photodiodes parameters in high-temperature region. As is shown, incorrect series resistance value might cause discrepancies inτ gr andτ diff 's estimations over one order of magnitude.