Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission. (29th June 2008)

• Record Type: Journal Article
• Authors: Belyakov, V. A.; Burdov, V. A.; Lockwood, R.; Meldrum, A.
• Other Names: Lockwood D. Academic Editor.
• Is Part Of: Advances in optical technologies. Volume 2008(2008)
• Publication Date: 2008-06-29
• Subjects: Optoelectronics -- Periodicals; Optoelectronics; Physics; Periodicals; Electronic journals; 621.36
• DOI: 10.1155/2008/279502
• Languages: English
• ISSNs: 1687-6393

Abstract

Abstract : Silicon nanocrystals (NCs) represent one of the most promising material systems for light emission applications in microphotonics. In recent years, several groups have reported on the observation of optical gain or stimulated emission in silicon NCs or in porous silicon (PSi). These results suggest that silicon-NC-based waveguide amplifiers or silicon lasers are achievable. However, in order to obtain clear and reproducible evidence of stimulated emission, it is necessary to understand the physical mechanisms at work in the light emission process. In this paper, we report on the detailed theoretical aspects of the energy levels and recombination rates in doped and undoped Si NCs, and we discuss the effects of energy transfer mechanisms. The theoretical calculations are extended toward computational simulations of ensembles of interacting nanocrystals. We will show that inhomogeneous broadening and energy transfer remain significant problems that must be overcome in order to improve the gain profile and to minimize nonradiative effects. Finally, we suggest means by which these objectives may be achieved.