Three-Dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects. (13th May 2008)

• Record Type: Journal Article
• Authors: Tsybeskov, L.; Lee, E.-K.; Chang, H.-Y.; Kamenev, B. V.; Lockwood, D. J.; Baribeau, J.-M.; Kamins, T. I.
• Other Names: Cheben Pavel Academic Editor.
• Is Part Of: Advances in optical technologies. Volume 2008(2008)
• Publication Date: 2008-05-13
• Subjects: Optoelectronics -- Periodicals; Optoelectronics; Physics; Periodicals; Electronic journals; 621.36
• DOI: 10.1155/2008/218032
• Languages: English
• ISSNs: 1687-6393

Abstract

Abstract : Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3–1.6 μ m. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency.