GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing. (13th November 2014)

• Record Type: Journal Article
• Authors: Kim, Jun Hyoung; Kawazoe, Tadashi; Ohtsu, Motoichi
• Other Names: Lerondel Gilles Academic Editor.
• Is Part Of: Advances in optical technologies. Volume 2015(2015)
• Publication Date: 2014-11-13
• Subjects: Optoelectronics -- Periodicals; Optoelectronics; Physics; Periodicals; Electronic journals; 621.36
• DOI: 10.1155/2015/236014
• Languages: English
• ISSNs: 1687-6393

Abstract

Abstract : By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.